elektronische bauelemente sse08n60sl 8a , 600v , r ds(on) 1.2 n-ch enhancement mode power mosfet 09-jul-2014 rev. a page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 220 p rohs compliant product a suffix of -c specifies halogen free description the sse08n60sl is an n-channel enhancement mode power mos field effect transistor which is produced . the improved planar strip cell and the improved guar ding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performan ce, and withstand high energy pulse in the avalanche and commutation mode. these devices are widely used in ac-dc power suppliers, dc-dc converters and h-bridge pwm motor drivers. features 8a, 600v, rds (on)(typ.) =0.96 @v gs =10v low gate charge low crss fast switching improved dv/dt capability absolute maximum ratings (t c =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v t c =25c 8 a continuous drain current t c =100c i d 5 a pulsed drain current i dm 32 a t c =25c 147 w total power dissipation derate above 25c p d 1.18 c / w single pulse avalanche energy 1 e as 450 mj operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient r ja 62.5 c / w maximum thermal resistance junction-case r jc 0.85 c / w notes: 1. l=30mh,i as =5a, v dd =110v, r g =25 , starting t j =25c millimeter millimeter ref. min. max. ref. min. max. a 9.3 10.6 h 2.54 bcs. b 14.2 16.5 i 1.8 2.9 c 2.7 bsc. j 2.6 3.95 d 12.6 14.7 k 0.3 0.7 e 1.0 1.8 l 5.8 7.0 f 0.4 1.0 m 1.0 1.45 g 3.6 4.8 1 gate 3 source 2 drain
elektronische bauelemente sse08n60sl 8a , 600v , r ds(on) 1.2 n-ch enhancement mode power mosfet 09-jul-2014 rev. a page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t c = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 600 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 30v, v ds =0v drain-source leakage current i dss - - 1 a v ds =600v, v gs =0v static drain-source on-resistance r ds(on) - 0.96 1.2 v gs =10v, i d =4a total gate charge 1.2 q g - 14.83 - gate-source charge 1.2 q gs - 5.9 - gate-drain change 1.2 q gd - 4 - nc i d =8a v ds =480v v gs =10v turn-on delay time 1.2 t d(on) - 29 - rise time 1.2 t r - 71.33 - turn-off delay time 1.2 t d(off) - 34.93 - fall time 1.2 t f - 32.8 - ns v dd =300v i d =8a r g =25 input capacitance c iss - 910 - output capacitance c oss - 105 - reverse transfer capacitance c rss - 2.43 - pf v gs =0 v ds =25v f =1.0mhz source-drain diode diode forward voltage v sd - - 1.4 v i s =8a, v gs =0 continuous source current i s - - 8 a pulsed source current i sm - - 32 a integral reverse p-n junction diode in the mosfet reverse recovery time t rr - 520.65 - ns reverse recovery charge q rr - 3.72 - c i s =8a,v gs =0, dl f /dt=100a/ s notes: 1. pulse test: pulse width Q 300 s, duty cycle Q 2% 2. essentially independent of operating temperatur e.
elektronische bauelemente sse08n60sl 8a , 600v , r ds(on) 1.2 n-ch enhancement mode power mosfet 09-jul-2014 rev. a page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente sse08n60sl 8a , 600v , r ds(on) 1.2 n-ch enhancement mode power mosfet 09-jul-2014 rev. a page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente sse08n60sl 8a , 600v , r ds(on) 1.2 n-ch enhancement mode power mosfet 09-jul-2014 rev. a page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical test curves
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